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Issue 40, 2015
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High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

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Abstract

During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.

Graphical abstract: High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

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Article information


Submitted
14 Aug 2015
Accepted
21 Sep 2015
First published
22 Sep 2015

Nanoscale, 2015,7, 16625-16630
Article type
Communication

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

F. Dirisaglik, G. Bakan, Z. Jurado, S. Muneer, M. Akbulut, J. Rarey, L. Sullivan, M. Wennberg, A. King, L. Zhang, R. Nowak, C. Lam, H. Silva and A. Gokirmak, Nanoscale, 2015, 7, 16625
DOI: 10.1039/C5NR05512A

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