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Issue 29, 2015
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Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

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Abstract

In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two V/III ratio procedure consists of a first high V/III ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low V/III ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {[1 with combining macron][1 with combining macron][1 with combining macron]} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.

Graphical abstract: Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

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Publication details

The article was received on 28 May 2015, accepted on 18 Jun 2015 and first published on 19 Jun 2015


Article type: Paper
DOI: 10.1039/C5NR03503A
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Citation: Nanoscale, 2015,7, 12592-12597

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    Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

    Z. Zhang, Z. Lu, P. Chen, W. Lu and J. Zou, Nanoscale, 2015, 7, 12592
    DOI: 10.1039/C5NR03503A

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