The impact of the thermal conductivity of a dielectric layer on the self-heating effect of a graphene transistor

Abstract

The self-heating effect of a graphene transistor on the transport properties was studied. Different dielectric layers, SiO₂ and AlN, which have different thermal conductivities, were used to tune the thermal dissipation of the graphene transistor. An obvious change in channel resistance and a shift of charge neutrality point were observed during the operation of the transistor with SiO₂, while the change is slight when AlN is the dielectric layer. This observation is considered to be related to the temperature determined desorption rate of p-type dopants in graphene.