Issue 16, 2015

Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam

Abstract

The infrared synchrotron radiation (IR-SR) beamline of SPring-8 as an IR light source was applied to characterize boron (B) atoms in silicon nanowires (SiNWs). The use of an IR-SR beam with much higher brilliance than conventional IR light sources and a wide range of wavenumbers from visible to far IR regions made it possible to detect a local vibrational mode of B in SiNWs. The use of this technique has also made it possible to detect other IR peaks related to transitions of a bound hole from the ground state of a B acceptor atom to excited states, clarifying the electronic state of B acceptors in SiNWs.

Graphical abstract: Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam

Supplementary files

Article information

Article type
Paper
Submitted
20 Jan 2015
Accepted
17 Mar 2015
First published
18 Mar 2015

Nanoscale, 2015,7, 7246-7251

Author version available

Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam

N. Fukata, W. Jevasuwan, Y. Ikemoto and T. Moriwaki, Nanoscale, 2015, 7, 7246 DOI: 10.1039/C5NR00427F

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