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Issue 1, 2015
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Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

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Abstract

In this report, we present the growth and structural analyses of broken gap InAs/GaSb core–shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs.

Graphical abstract: Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

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Publication details

The article was received on 05 Sep 2014, accepted on 03 Nov 2014 and first published on 10 Nov 2014


Article type: Paper
DOI: 10.1039/C4NR05164E
Nanoscale, 2015,7, 356-364

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    Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

    T. Rieger, D. Grützmacher and M. I. Lepsa, Nanoscale, 2015, 7, 356
    DOI: 10.1039/C4NR05164E

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