Issue 46, 2015

Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE2−yZn4As4·n(REAs) and Mn-substituted derivatives RE2−yMnxZn4−xAs4·n(REAs) (RE = La–Nd, Sm, Gd)

Abstract

A homologous series of ternary rare-earth zinc arsenides, prepared by reactions of the elements at 750 °C, has been identified with the formula RE2−yZn4As4·n(REAs) (n = 2, 3, 4) for various RE members. They adopt trigonal structures: RE4−yZn4As6 (RE = La–Nd), space group R[3 with combining macron]m1, Z = 3; RE5−yZn4As7 (RE = Pr, Nd, Sm, Gd), space group P[3 with combining macron]m1, Z = 1; RE6−yZn4As8 (RE = La–Nd, Sm, Gd), space group R[3 with combining macron]m1, Z = 3. The Zn atoms can be partially substituted by Mn atoms, resulting in quaternary derivatives RE2−yMnxZn4−xAs4·n(REAs). Single-crystal structures were determined for nine ternary and quaternary arsenides RE2−yM4As4·n(REAs) (M = Mn, Zn) as representative examples of these series. The structures are built by stacking close-packed nets of As atoms, sometimes in very long sequences, with RE atoms occupying octahedral sites and M atoms occupying tetrahedral sites, resulting in an intergrowth of [REAs] and [M2As2] slabs. The recurring feature of all members of the homologous series is a sandwich of [M2As2]–[REAs]–[M2As2] slabs, while rocksalt-type blocks of [REAs] increase in thickness between these sandwiches with higher n. Similar to the previously known related homologous series REM2−xAs2·n(REAs) which is deficient in M, this new series RE2−yM4As4·n(REAs) exhibits deficiencies in RE to reduce the electron excess that would be present in the fully stoichiometric formulas. Enthalpic and entropic factors are considered to account for the differences in site deficiencies in these two homologous series. Band structure calculations indicate that the semiconducting behaviour of the parent n = 0 member (with CaAl2Si2-type structure) gradually evolves, through a narrowing of the gap between valence and conduction bands, to semimetallic behaviour as the number of [REAs] blocks increases, to the limit of n = ∞ for rocksalt-type REAs.

Graphical abstract: Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE2−yZn4As4·n(REAs) and Mn-substituted derivatives RE2−yMnxZn4−xAs4·n(REAs) (RE = La–Nd, Sm, Gd)

Supplementary files

Article information

Article type
Paper
Submitted
14 Sep 2015
Accepted
25 Oct 2015
First published
30 Oct 2015

Dalton Trans., 2015,44, 20254-20264

Author version available

Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE2−yZn4As4·n(REAs) and Mn-substituted derivatives RE2−yMnxZn4−xAs4·n(REAs) (RE = La–Nd, Sm, Gd)

X. Lin, D. Tabassum and A. Mar, Dalton Trans., 2015, 44, 20254 DOI: 10.1039/C5DT03596A

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