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Issue 23, 2015
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Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

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Abstract

The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAHργxx is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ > 2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ > 2 is not expected in homogenous epitaxial systems. We demonstrated that γ > 2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.

Graphical abstract: Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

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Article information


Submitted
03 Apr 2015
Accepted
05 May 2015
First published
13 May 2015

Phys. Chem. Chem. Phys., 2015,17, 15435-15441
Article type
Paper

Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

Y. Zhang, W. B. Mi, X. C. Wang and X. X. Zhang, Phys. Chem. Chem. Phys., 2015, 17, 15435
DOI: 10.1039/C5CP01955A

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