Issue 7, 2015

Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique

Abstract

Two assemblies, porphyrin powder/ITO and porphyrin film/ITO, were built by a facile method. The time-resolved photovoltage technique was utilized to prove the behaviour of photo-induced charges in the two assemblies. The photovoltage results show that the porphyrin film/ITO assembly displays a reversal polarity response, which is different from the response of porphyrin powder/ITO. This phenomenon is due to the effect of a built-in field on photo-induced charge behaviour at the porphyrin film/ITO interface. This result is beneficial for the development of a measuring method for detecting heterojunction interface formation and understanding the photoelectric process in photoelectric materials and devices.

Graphical abstract: Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique

Supplementary files

Article information

Article type
Paper
Submitted
07 Nov 2014
Accepted
07 Jan 2015
First published
12 Jan 2015

Phys. Chem. Chem. Phys., 2015,17, 5202-5206

Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique

X. Wei, L. Han, C. Mao, D. Wang, X. Li, P. Feng and J. Chen, Phys. Chem. Chem. Phys., 2015, 17, 5202 DOI: 10.1039/C4CP05166A

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