Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

Abstract

Novel indium nitride (InN) based nanomaterials are important for high speed electronics and infrared optoelectronics. In this paper, high quality indium nitride (InN) nanostructures, including nanowires and nanonecklaces, have been grown on one substrate by chemical vapor deposition. The morphologies and microstructures of the InN nanowires and nanonecklaces were characterized, which confirmed their chemical composition as well as single crystallinity. The InN nanonecklaces consist of multiple beads composed of two equilateral truncated hexagonal cones faceted with {10} and {101} planes. The growth mechanism of the InN nanonecklace was studied and a three-step process was suggested for the growth. Finally, the room temperature photoluminescence spectra of the two nanostructures showed near band edge emissions of around 0.73 eV, where the emission from the nanonecklace was found to be stronger, indicating promise for near-infrared optoelectronics applications.