Growth of an oriented Bi40−xInxTe60 (x = 3, 7) thermoelectric material by seeding zone melting for the enhancement of chemical homogeneity

Abstract

A zone melting technique with seeding has been developed to prepare oriented Bi_40−xIn_xTe₆₀ (at%, x = 3; 7) thermoelectric material with enhanced chemical homogeneity. The respective initial compositions of the sample and the seed were chosen according to the pseudo-binary Bi₂Te₃–In₂Te₃ phase diagram that was experimentally redetermined with the aid of a former mushy zone that was resolidified in a temperature gradient. An oriented Bi_40−xIn_xTe₆₀ bulk material with a uniform composition close to the target value over the entire length of the zone-melted region along the growth direction has been successfully manufactured.