Defect-enhanced void filling and novel filled phases of open-structure skutterudites†
Abstract
We report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.