A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency†
Abstract
Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5–1.5 μm) were synthesized using co-electrodeposited Cu–Zn–Sn–S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.