Issue 21, 2015
From the journal:

Chemical Communications

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

Zhongrong Shen,*ab   Takashi Masuda,ab   Hideyuki Takagishi,b   Keisuke Ohdairaab  and  Tatsuya Shimoda*ab  

* Corresponding authors

a School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Nomi, Ishikawa 923-1292, Japan
E-mail: z-shen@jaist.ac.jp, tshimoda@jaist.ac.jp

b Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 1-1 Nomi, Ishikawa 923-1292, Japan

Abstract

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.

Graphical abstract: Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

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Article information

DOI
https://doi.org/10.1039/C4CC09026H
Article type
Communication
Submitted
12 Nov 2014
Accepted
06 Feb 2015
First published
09 Feb 2015

Chem. Commun., 2015,51, 4417-4420

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Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

Z. Shen, T. Masuda, H. Takagishi, K. Ohdaira and T. Shimoda, Chem. Commun., 2015, 51, 4417 DOI: 10.1039/C4CC09026H

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