Issue 47, 2014
From the journal:

Journal of Materials Chemistry C

Correction: Epitaxial growth of GaN films on unconventional oxide substrates

Wenliang Wang,a   Weijia Yang,a   Haiyan Wanga  and  Guoqiang Li*ab  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
E-mail: msgli@scut.edu.cn
Tel: +86 20 87112957

b Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

Abstract

Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.

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Article information

DOI
https://doi.org/10.1039/C4TC90149E
Article type
Correction
Submitted
21 Oct 2014
Accepted
21 Oct 2014
First published
04 Nov 2014
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2014,2, 10218-10218

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Correction: Epitaxial growth of GaN films on unconventional oxide substrates

W. Wang, W. Yang, H. Wang and G. Li, J. Mater. Chem. C, 2014, 2, 10218 DOI: 10.1039/C4TC90149E

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