Ambipolar field-effect transistors using conjugated polymers with structures of bilayer, binary blends, and paralleled nanofibers

Abstract

In this paper, we explore ambipolar organic field-effect transistor (FET) characteristics using bilayer, binary blends, and paralleled nanofibers of poly(3-hexylthiophene) (P3HT; p-type) and poly{[N,N′-bis(2-decyltetradecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-(thiophene-2,5-diyl)} (P(NDI-T); n-type). Ambipolar transistors with paralleled single P3HT and P(NDI-T) electrospun nanofibers showed high and well-balanced mobilities of 8.25 × 10⁻² cm² V⁻¹ s⁻¹ for holes and 7.51 × 10⁻² cm² V⁻¹ s⁻¹ for electrons with I_on/I_off ≈ 10⁴. This ambipolar nanofiber FET was also applied to a complementary inverter with a gain of up to 20.5.