Long wavelength emissions of Se4+-doped In2O3 hierarchical nanostructures†
Se4+-doped cubic-structured In2O3 hierarchical nanostructures have been synthesized by controllable thermal oxidation of In3Se4 nanostructures. The synthesized nanostructures preserve the original hierarchical morphology of In3Se4 nanosheet-assembled nanostructures. Moreover, the In3Se4 single crystalline nanosheets can be transformed into Se4+-doped In2O3 polycrystalline structures consisting of interconnected nanoparticles. The photoluminescence property measurements show that the Se4+-doped In2O3 hierarchical nanostructures have red light emissions centered at 630, 670, and 770 nm and near infrared emissions centered at 910 nm, which is ascribed to the Se4+ doping.