Issue 20, 2014

N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

Abstract

A family of barbituric and thiobarbituric acid end capped small molecule semiconductors were synthesized, characterized and shown to exhibit n-channel organic thin film transistor properties. By changing the N-alkyl substituent from methyl to ethyl, a dramatic increase in electron mobilities was observed with values nearing 0.3 cm2 Vāˆ’1 sāˆ’1.

Graphical abstract: N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

Supplementary files

Article information

Article type
Communication
Submitted
01 Jan 2014
Accepted
01 Apr 2014
First published
16 Apr 2014
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2014,2, 3895-3899

Author version available

N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

Y. Shu, A. Mikosch, K. N. Winzenberg, P. Kemppinen, C. D. Easton, A. Bilic, C. M. Forsyth, C. J. Dunn, Th. B. Singh and G. E. Collis, J. Mater. Chem. C, 2014, 2, 3895 DOI: 10.1039/C4TC00002A

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