An inkjet-printed TTF–TCNQ nanoweb as an effective modification layer for high mobility organic field-effect transistors

Abstract

The interface between an organic semiconductor and a dielectric plays an important role in determining the device performance of organic field-effect transistors (OFETs). A uniform ink-jet printed tetrathiafulvalene–tetracyanoquinodimethane (TTF–TCNQ) nanoweb was investigated as the buffer layer between the semiconductor layer and the dielectric in OFETs. Compared to the n-octadecyl triethoxysilane (OTS) modification layer, we observed an increase in the “effective” field effect mobility by as much as several tens of times while maintaining the high on/off ratios in the TTF–TCNQ based device. This work demonstrated that with the advantages of low-cost, high-performance and printability, the TTF–TCNQ nanoweb could serve as an excellent buffer layer for OFETs.