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Issue 5, 2014
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Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

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Abstract

A thin-film transistor (TFT) non-volatile memory (NVM) device was fabricated using α-helix poly(γ-methyl-L-glutamate) (PMLG) as a ferroelectric layer. In order to study the mechanism of memory driving, the temperature dependence of transfer characteristics and memory performance was investigated. It was revealed that the cooperative movement of the large dipole moment along the rod-like main chain and that of the small dipole moment in the side chain played an important role in the memory function.

Graphical abstract: Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

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Publication details

The article was received on 10 Sep 2013, accepted on 18 Nov 2013 and first published on 18 Nov 2013


Article type: Paper
DOI: 10.1039/C3TC31777C
Citation: J. Mater. Chem. C, 2014,2, 879-883
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    Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

    L. Liang, T. Fukushima, K. Nakamura, S. Uemura, T. Kamata and N. Kobayashi, J. Mater. Chem. C, 2014, 2, 879
    DOI: 10.1039/C3TC31777C

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