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Issue 22, 2014
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Deposition of topological insulator Sb2Te3 films by an MOCVD process

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Abstract

Layered Sb2Te3 films were grown by a MOCVD process on Al2O3(0001) substrates at 400 °C by use of i-Pr3Sb and Et2Te2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy.

Graphical abstract: Deposition of topological insulator Sb2Te3 films by an MOCVD process

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Article information


Submitted
10 Feb 2014
Accepted
11 Mar 2014
First published
11 Mar 2014

This article is Open Access

J. Mater. Chem. A, 2014,2, 8215-8222
Article type
Paper

Deposition of topological insulator Sb2Te3 films by an MOCVD process

G. Bendt, S. Zastrow, K. Nielsch, P. S. Mandal, J. Sánchez-Barriga, O. Rader and S. Schulz, J. Mater. Chem. A, 2014, 2, 8215
DOI: 10.1039/C4TA00707G

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