Large resistive switching in Pt/BNT/HfO2/Pt capacitors

Abstract

A large resistive switching (RS) of 4 orders of magnitude is observed in Pt/Bi_3.15Nd_0.85Ti₃O₁₂(BNT)/HfO₂/Pt capacitors. The studies of the polarization–voltage loop, capacitance–voltage loop, the fitting current–voltage data, and the current–temperature curves suggest that the RS is mainly induced by the formation/rupture of the conductive filament which is induced by inserting the HfO₂ dielectric layer in the Pt/BNT/Pt capacitor. The results demonstrate a possibility to control the RS characteristics by modulating the RS mechanism in the polycrystalline ferroelectric thin films.