Bipolar resistive switching characteristics in LaTiO3 nanosheets

Abstract

In this work, we reported a facile approach to fabricate LaTiO₃ (LTO) nanosheets for resistive switching memory applications. Different from other lanthanum titanates synthesized via solvothermal approaches, herein the unique composition ratio of La : Ti : O = 1 : 1 : 3 has been found. The drop-coating method was utilized to deposit LTO films followed by gold top electrode deposition to complete device fabrication. The pristine device was found to exhibit excellent bipolar resistance switching characteristics with resistance ON/OFF ratio of ∼100, high uniformity in switching parameters and stability at elevated temperatures as well. The origin of switching behaviour in these devices on the basis of formation and annihilation of conducting filaments was addressed.