Issue 4, 2014

Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Abstract

To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 108.7/104.2/1, low switching threshold voltage of −1.80 V/−2.87 V, and good stability for these three states.

Graphical abstract: Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Supplementary files

Article information

Article type
Communication
Submitted
30 Jan 2014
Accepted
16 Apr 2014
First published
16 Apr 2014

Mater. Horiz., 2014,1, 446-451

Author version available

Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

P. Gu, J. Gao, C. Lu, W. Chen, C. Wang, G. Li, F. Zhou, Q. Xu, J. Lu and Q. Zhang, Mater. Horiz., 2014, 1, 446 DOI: 10.1039/C4MH00022F

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