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Issue 44, 2014

Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films

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Abstract

Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)3 + H2O/O3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 °C, respectively. The crystal structures of NaOtBu and KOtBu were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8′′ wafer scale.

Graphical abstract: Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films

Supplementary files

Article information


Submitted
26 Jun 2014
Accepted
18 Sep 2014
First published
19 Sep 2014

This article is Open Access

Dalton Trans., 2014,43, 16666-16672
Article type
Paper

Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films

E. Østreng, H. H. Sønsteby, S. Øien, O. Nilsen and H. Fjellvåg, Dalton Trans., 2014, 43, 16666 DOI: 10.1039/C4DT01930J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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