Issue 3, 2014
From the journal:

Physical Chemistry Chemical Physics

Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation†

Lu Gan,a   Haiping He,*a   Luwei Suna  and  Zhizhen Yea  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: hphe@zju.edu.cn
Fax: +86-571-87952625
Tel: +86-571-87953139

Abstract

Core–shell structured silicon nanowires (Si NWs) were obtained by coating Si NWs with an HfO2 layer. Enhanced photoluminescence (PL) and a slightly decreased PL lifetime are achieved by HfO2 coating. Furthermore, the sensing stability is strongly improved. The improvement of PL properties is interpreted in terms of surface passivation and the Purcell effect.

Graphical abstract: Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation

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Article information

DOI
https://doi.org/10.1039/C3CP53952K
Article type
Communication
Submitted
18 Sep 2013
Accepted
31 Oct 2013
First published
04 Nov 2013

Phys. Chem. Chem. Phys., 2014,16, 890-894

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Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation

L. Gan, H. He, L. Sun and Z. Ye, Phys. Chem. Chem. Phys., 2014, 16, 890 DOI: 10.1039/C3CP53952K

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