Issue 47, 2014
From the journal:

CrystEngComm

Functional spinel oxide heterostructures on silicon†

Romain Bachelet,*ab   Patricia de Coux,ac   Bénédicte Warot-Fonrose,c   Vassil Skumryev,d   Gang Niu,‡b   Bertrand Vilquin,b   Guillaume Saint-Gironsb  and  Florencio Sáncheza  

* Corresponding authors

a Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona, Spain

b Institut des Nanotechnologies de Lyon (INL-CNRS UMR 5270), Univ. de Lyon, Ecole Centrale de Lyon, 36, Av. Guy Collongue, 69134 Ecully Cedex, France
E-mail: romain.bachelet@ec-lyon.fr
Tel: +33 472186045

c CEMES, CNRS UPR 8011, 29 rue Jeanne Marvig, Toulouse, France

d Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain, and Dep. de Física, Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Spain

Abstract

Novel spinel heteroepitaxial structures composed of ferrimagnetic spinel CoFe2O4 (CFO) and ultrathin γ-Al2O3 buffer layers are integrated on Si(111). Flat (111)-oriented epitaxial CFO films with only two in-plane domains induced by γ-Al2O3 are ferromagnetic at room temperature with high saturation magnetization. These results open the prospect of using functional spinel layers on silicon for monolithic devices.

Graphical abstract: Functional spinel oxide heterostructures on silicon

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Article information

DOI
https://doi.org/10.1039/C4CE01817F
Article type
Communication
Submitted
03 Sep 2014
Accepted
13 Oct 2014
First published
13 Oct 2014

CrystEngComm, 2014,16, 10741-10745

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Functional spinel oxide heterostructures on silicon

R. Bachelet, P. de Coux, B. Warot-Fonrose, V. Skumryev, G. Niu, B. Vilquin, G. Saint-Girons and F. Sánchez, CrystEngComm, 2014, 16, 10741 DOI: 10.1039/C4CE01817F

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