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Issue 46, 2014
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Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

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Abstract

In0.53Ga0.47As films were grown on a Si (111) substrate with two different InxGa1−xAs buffer layers using molecular beam epitaxy (MBE). The effect of buffer layer on the as-grown In0.53Ga0.47As epi-layers was investigated using X-ray diffraction (XRD), reciprocal space mapping (RSM), Raman and transmission electron microscopy (TEM). XRD results showed that the crystalline quality of the as-grown In0.53Ga0.47As epi-layer grown on the Si substrate, using a low-temperature In0.4Ga0.6As buffer layer with in situ annealing, was better than that grown using In0.2Ga0.8As/In0.4Ga0.6As buffer layers. Moreover, the misfit strain between the In0.53Ga0.47As epi-layers and the Si substrate was nearly completely released by inserting a single In0.4Ga0.6As buffer layer grown at 390 °C with in situ annealing at 560 °C. Specifically, the relaxation value of the In0.53Ga0.47As epi-layer with the single In0.4Ga0.6As buffer layer was 97.16%. The lattice mismatch strain of the In0.53Ga0.47As epi-layer was well confined to the In0.4Ga0.6As buffer layer, without being extended to the subsequently grown In0.53Ga0.47As epi-layer compared with its counterpart using the In0.2Ga0.8As/In0.4Ga0.6As buffer layers. The low-temperature In0.4Ga0.6As buffer layer shows a way to realize fully relaxed In0.53Ga0.47As films with a high crystalline quality on the Si substrate.

Graphical abstract: Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

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Publication details

The article was received on 03 Aug 2014, accepted on 19 Sep 2014 and first published on 22 Sep 2014


Article type: Paper
DOI: 10.1039/C4CE01607F
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Citation: CrystEngComm, 2014,16, 10721-10727

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    Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

    F. Gao, L. Wen, Y. Guan, J. Li, X. Zhang, M. Jia, S. Zhang and G. Li, CrystEngComm, 2014, 16, 10721
    DOI: 10.1039/C4CE01607F

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