Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth
Abstract
A coherent InP/Si heterojunction with an atomically abrupt interface and low defect density is obtained by conducting corrugated epitaxial lateral overgrowth of InP on an engineered (001) Si substrate, with InP seed mesa oriented at 30° from the [110] direction in a hydride vapour phase epitaxy reactor. Ohmic conduction across the InP/Si heterojunction can be achieved.