Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

Yimin Chen; Guoxiang Wang; Xiang Shen; Tiefeng Xu; R. P. Wang; Liangcai Wu; Yegang Lu; Junjian Li; Shixun Dai; Qiuhua Nie

doi:10.1039/C3CE42024H

Crystallization behaviors of Zn_xSb_100−x thin films for ultralong data retention phase change memory applications

Yimin Chen,^a Guoxiang Wang,^a Xiang Shen,*^a Tiefeng Xu,*^a R. P. Wang,^b Liangcai Wu,^c Yegang Lu,^a Junjian Li,^a Shixun Dai^a and Qiuhua Nie^a

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^a Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China
E-mail: shenxiang@nbu.edu.cn, xutiefeng@nbu.edu.cn
Fax: +86 0574 97600946
Tel: +86 0574 87600947

^b Laser Physics Centre, Australian National University, ACT, Canberra, Australia

^c Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Abstract

Zn_xSb_100−x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1 : 1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

CrystEngComm

Crystallization behaviors of Zn_xSb_100−x thin films for ultralong data retention phase change memory applications

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Crystallization behaviors of Zn_xSb_100−x thin films for ultralong data retention phase change memory applications

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