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Issue 40, 2014
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Furan fused V-shaped organic semiconducting materials with high emission and high mobility

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Abstract

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2′,3′-d]furan (DNF–V) derivatives. DNF–V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF–V derivatives showed an excellent carrier mobility of up to 1.3 cm2 V−1 s−1, thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

Graphical abstract: Furan fused V-shaped organic semiconducting materials with high emission and high mobility

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Article information


Submitted
02 Oct 2013
Accepted
08 Nov 2013
First published
08 Nov 2013

Chem. Commun., 2014,50, 5342-5344
Article type
Communication

Furan fused V-shaped organic semiconducting materials with high emission and high mobility

K. Nakahara, C. Mitsui, T. Okamoto, M. Yamagishi, H. Matsui, T. Ueno, Y. Tanaka, M. Yano, T. Matsushita, J. Soeda, Y. Hirose, H. Sato, A. Yamano and J. Takeya, Chem. Commun., 2014, 50, 5342
DOI: 10.1039/C3CC47577H

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