Issue 86, 2014

Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests

Abstract

The resistive switching effect of devices with metal-oxide–metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on a Ti substrate were synthesized by a hydrothermal process. Moreover, a resistive switching memory device with Ag/NiWO4/Ti structure is demonstrated. The device shows an enhanced bipolar resistive switching effect under white-light illumination. This study is useful for exploring multifunctional materials and their applications in light-controlled nonvolatile memory devices.

Graphical abstract: Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests

Associated articles

Supplementary files

Article information

Article type
Communication
Submitted
25 Jul 2014
Accepted
08 Sep 2014
First published
09 Sep 2014

Chem. Commun., 2014,50, 13142-13145

Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests

B. Sun, W. Zhao, L. Wei, H. Li and P. Chen, Chem. Commun., 2014, 50, 13142 DOI: 10.1039/C4CC05784H

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