The effect of ALD-Zno layers on the formation of CH3NH3PbI3 with different perovskite precursors and sintering temperatures

Xu Dong; Hongwei Hu; Bencai Lin; Jianning Ding; Ningyi Yuan

doi:10.1039/C4CC04685D

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The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures†

Xu Dong,^a Hongwei Hu,^a Bencai Lin,^abc Jianning Ding*^abc and Ningyi Yuan*^abc

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* Corresponding authors

^a Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou, Jiangsu, China
E-mail: nyyuan@cczu.edu.cn

^b Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, China

^c Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou, Jiangsu, China

Abstract

ZnO films deposited by atomic layer deposition at 70 °C were used to fabricate perovskite solar cells, and a conversion efficiency of 13.1% was obtained. On the ZnO layer, CH₃NH₃PbI₃ was formed at room temperature using CH₃NH₃I and PbCl₂ precursors, which is in contrast to the reported results.

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Article information

DOI: https://doi.org/10.1039/C4CC04685D
Article type: Communication
Submitted: 20 Jun 2014
Accepted: 12 Aug 2014
First published: 14 Aug 2014

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Chem. Commun., 2014,50, 14405-14408

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The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures

X. Dong, H. Hu, B. Lin, J. Ding and N. Yuan, Chem. Commun., 2014, 50, 14405 DOI: 10.1039/C4CC04685D

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