Issue 68, 2014
From the journal:

Chemical Communications

Non-activation ZnO array as a buffering layer to fabricate strongly adhesive metal–organic framework/PVDF hollow fiber membranes†

Wanbin Li,a   Qin Meng,b   Xiaonian Li,a   Congyang Zhang,a   Zheng Fana  and  Guoliang Zhang*a  

* Corresponding authors

a Institute of Oceanic and Environmental Chemical Engineering, College of Chemical Engineering and Material Science, Zhejiang University of Technology, Hangzhou 310014, China
E-mail: guoliangz@zjut.edu.cn
Fax: +86 571 88320863
Tel: +86 571 88320863

b Department of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310027, China

Abstract

A non-activation (NA) ZnO array is directly grown on a PVDF hollow fiber membrane. The defect-free MOF layers can be synthesized easily on the NA-ZnO array without any activation procedure. The array and MOF layers are strongly adhered to the hollow fiber membrane. The prepared ZIF membranes exhibit excellent gas separation performances.

Graphical abstract: Non-activation ZnO array as a buffering layer to fabricate strongly adhesive metal–organic framework/PVDF hollow fiber membranes

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Article information

DOI
https://doi.org/10.1039/C4CC03864A
Article type
Communication
Submitted
22 May 2014
Accepted
19 Jun 2014
First published
19 Jun 2014

Chem. Commun., 2014,50, 9711-9713

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Non-activation ZnO array as a buffering layer to fabricate strongly adhesive metal–organic framework/PVDF hollow fiber membranes

W. Li, Q. Meng, X. Li, C. Zhang, Z. Fan and G. Zhang, Chem. Commun., 2014, 50, 9711 DOI: 10.1039/C4CC03864A

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