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Issue 26, 2013
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Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

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Abstract

In this study, the temperature dependent thermoelectric properties of sol–gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500 °C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed.

Graphical abstract: Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

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Publication details

The article was received on 01 Feb 2013, accepted on 24 Apr 2013 and first published on 24 Apr 2013


Article type: Paper
DOI: 10.1039/C3TC30215F
J. Mater. Chem. C, 2013,1, 4122-4127

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    Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

    A. Z. Barasheed, S. R. S. Kumar and H. N. Alshareef, J. Mater. Chem. C, 2013, 1, 4122
    DOI: 10.1039/C3TC30215F

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