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Issue 33, 2013
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Solution phase synthesis of silicon and germanium nanowires

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Abstract

Si and Ge nanowires have attracted widespread interest due to their suitability for photovoltaic, nanoelectronic, sensing and energy storage applications. As a result, a variety of synthetic protocols have emerged which include chemical vapour deposition and solution phase approaches. Early solution based approaches were hindered by the high nucleation temperatures required for Ge and Si NW formation but these have been overcome by using either supercritical fluid (SCF) approaches or high boiling point organic solvent (HBS) routes. This feature article examines the various synthetic strategies which have been successful in forming Ge and Si NWs within solvent based systems with particular emphasis on the reaction media and catalytic method employed.

Graphical abstract: Solution phase synthesis of silicon and germanium nanowires

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Article information


Submitted
11 Jun 2013
Accepted
02 Jul 2013
First published
09 Jul 2013

J. Mater. Chem. C, 2013,1, 4996-5007
Article type
Feature Article

Solution phase synthesis of silicon and germanium nanowires

H. Geaney, E. Mullane and K. M. Ryan, J. Mater. Chem. C, 2013, 1, 4996
DOI: 10.1039/C3TC31123F

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