Issue 38, 2013
From the journal:

Journal of Materials Chemistry C

Low threshold photonic crystal lasing from a dye with high emission quantum yield and weak self-quenching

Jiao Feng,†a   Sha Bian,†ac   Yue Long,b   Hao Yuan,a   Qing Liao,b   Huaqiang Cai,*a   Hui Huang,*a   Kai Song*b  and  Guoqiang Yangb  

* Corresponding authors

a Key Laboratory of Science and Technology on High Energy Laser, Institute of Chemical Materials and Advanced Materials Center, China Academy of Engineering Physics, Mianyang, China
E-mail: danluxiusan@126.com, hhICM2010@hotmail.com

b Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
E-mail: kai.song@iccas.ac.cn

c School of Pharmaceutical Sciences, Peking University, Beijing, China

Abstract

We demonstrate photonic crystal lasing with a low threshold power of ∼10 μJ per pulse from a dye with a high luminescence quantum yield and weak self-quenching effect. The effects of the stop bands of photonic crystals and concentration of doped dye on the threshold of lasing were systematically investigated.

Graphical abstract: Low threshold photonic crystal lasing from a dye with high emission quantum yield and weak self-quenching

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Article information

DOI
https://doi.org/10.1039/C3TC30730A
Article type
Paper
Submitted
19 Apr 2013
Accepted
24 May 2013
First published
05 Jul 2013

J. Mater. Chem. C, 2013,1, 6157-6162

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Low threshold photonic crystal lasing from a dye with high emission quantum yield and weak self-quenching

J. Feng, S. Bian, Y. Long, H. Yuan, Q. Liao, H. Cai, H. Huang, K. Song and G. Yang, J. Mater. Chem. C, 2013, 1, 6157 DOI: 10.1039/C3TC30730A

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