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Issue 25, 2013
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High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures

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Abstract

Low-voltage operable organic field-effect transistors (OFETs) were fabricated using a low-temperature curable high-k polymer cyanoethyl pullulan (CEP) as a gate insulator with trimethylolpropane triglycidyl ether (TTE) as a crosslinking agent. With this crosslinking agent, the gate insulators showed low leakage current and a high dielectric constant of 14.8–16, and most importantly, could be cured at low temperatures around 100 °C, which is compatible with most plastic substrates for future plastic electronics. The favorable semiconductor–dielectric interface was obtained due to the surface alignment of well-packed pentacene domains, which enabled excellent transistor performance, with one of the highest mobilities around 6 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) ∼105, and a steep subthreshold (SS) ∼0.095 V dec−1. The high mobility was found to be closely correlated with the surface C[triple bond, length as m-dash]N dipole density rather than other possibilities, such as dielectric roughness and surface energy. The initial growth of the semiconductors was also studied and correlated with the affecting variables.

Graphical abstract: High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures

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Publication details

The article was received on 22 Jan 2013, accepted on 17 Apr 2013 and first published on 17 Apr 2013


Article type: Paper
DOI: 10.1039/C3TC30134F
Citation: J. Mater. Chem. C, 2013,1, 3955-3960
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    High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures

    W. Xu, C. Guo and S. Rhee, J. Mater. Chem. C, 2013, 1, 3955
    DOI: 10.1039/C3TC30134F

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