Large conductance switching nonvolatile memories based on p-ZnS nanoribbon/n-Si heterojunction†
Abstract
A new structure nonvolatile memory, with large conductance switching (on/off ratio > 106), has been constructed from a p-ZnS
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* Corresponding authors
a
School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, P.R. China
E-mail:
apjiang@hfut.edu.cn
b School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, P.R. China
c
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, P.R. China
E-mail:
jsjie@suda.edu.cn
A new structure nonvolatile memory, with large conductance switching (on/off ratio > 106), has been constructed from a p-ZnS
Y. Yu, Y. Jiang, P. Jiang, Y. Zhang, D. Wu, Z. Zhu, Q. Liang, S. Chen, Y. Zhang and J. Jie, J. Mater. Chem. C, 2013, 1, 1238 DOI: 10.1039/C2TC00267A
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