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Issue 43, 2013
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Low-cost, Mo(S,Se)2-free superstrate-type solar cells fabricated with tunable band gap Cu2ZnSn(S1−xSex)4 nanocrystal-based inks and the effect of sulfurization

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Abstract

A low-cost and Mo(S,Se)2-free superstrate-type device structure is reported for the first time with the tunable band gap Cu2ZnSn(S1−xSex)4 nanocrystals. Using a facile hot-injection approach with only oleylamine reagent for synthesizing Cu2ZnSn(S1−xSex)4 nanocrystals with varied Se to (S + Se) ratio, the role of Se in Cu2ZnSn(S1−xSex)4 nanocrystals during the sulfurization step is systematically investigated. The loss of Sn is suppressed and the grain size is enlarged when the Se in Cu2ZnSn(S1−xSex)4 nanocrystals is replaced by S during the sulfurization. As a proof-of-concept, our superstrate-type architecture without using any binder in the ink exhibits Voc and FF comparable to the typical substrate-type device structure, in addition to its advantage of low cost.

Graphical abstract: Low-cost, Mo(S,Se)2-free superstrate-type solar cells fabricated with tunable band gap Cu2ZnSn(S1−xSex)4 nanocrystal-based inks and the effect of sulfurization

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Publication details

The article was received on 29 May 2013, accepted on 02 Sep 2013 and first published on 05 Sep 2013


Article type: Communication
DOI: 10.1039/C3RA42624F
RSC Adv., 2013,3, 19946-19951

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    Low-cost, Mo(S,Se)2-free superstrate-type solar cells fabricated with tunable band gap Cu2ZnSn(S1−xSex)4 nanocrystal-based inks and the effect of sulfurization

    C. Wang, C. Wang, B. Reeja-Jayan and A. Manthiram, RSC Adv., 2013, 3, 19946
    DOI: 10.1039/C3RA42624F

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