A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Abstract

A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (−4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm² V⁻¹ s⁻¹ and a high on–off current ratio of 10⁵–10⁶. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS–pentacene demonstrated a maximum voltage gain (−dV_OUT/dV_IN) of 64.