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Issue 21, 2013
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Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots

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Abstract

PbSe quantum dots (QDs) were employed as real-time and on-chip temperature sensors to monitor the surface temperature of GaN LED chips. The temperature-dependent photoluminescence spectra were achieved and confirmed to be a good method for surface temperature sensing in a micro- to nano-region. The nanosized QD sensors did not influence the LED emission spectrum due to their infrared emission and little absorption. The surface temperature of GaN LED chips was analyzed at different working times and voltages. The temperature sensitivity characterized by the photoluminescence peak position of PbSe QDs was found to be 0.15 nm °C−1 in a range of 30–120 °C and the precision was determined to be ±3 °C. The QD surface temperature sensors were confirmed to have good reversibility and repeatability.

Graphical abstract: Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots

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Publication details

The article was received on 12 May 2013, accepted on 18 Aug 2013 and first published on 20 Aug 2013


Article type: Paper
DOI: 10.1039/C3NR02438E
Citation: Nanoscale, 2013,5, 10481-10486
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    Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots

    P. Gu, Y. Zhang, Y. Feng, T. Zhang, H. Chu, T. Cui, Y. Wang, J. Zhao and W. W. Yu, Nanoscale, 2013, 5, 10481
    DOI: 10.1039/C3NR02438E

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