Jump to main content
Jump to site search

Issue 16, 2013
Previous Article Next Article

Strain and tilt during epitaxial growth of highly ordered In2O3nanorods

Author affiliations

Abstract

Precise control over the morphology of one-dimensional (1D) nanostructures is an essential step in the effort to develop nano-devices with exotic properties. Here we demonstrate the formation of highly aligned In2O3 nanorod arrays on Y-stabilised ZrO2(110) grown by oxygen plasma assisted molecular beam epitaxy. The evolution of morphologies, strain and tilt in the In2O3 nanorods are studied by atomic force microscopy and high resolution synchrotron-based X-ray diffraction. It is shown that the preferential 1D growth is driven by minimization of the total surface and interface energies. The mismatch of ca. 1.7% between the substrate and the epilayer is accommodated by strain along the [1[1 with combining macron]0] direction coupled with tilting of the rods along [001] and [00[1 with combining macron]] directions and contraction in the [110] direction. The present highly ordered In2O3 nanorod arrays supported on an insulating substrate are of potential interest for large-scale fabrication of nano-devices.

Graphical abstract: Strain and tilt during epitaxial growth of highly ordered In2O3 nanorods

Back to tab navigation

Article information


Submitted
08 Feb 2013
Accepted
15 Jun 2013
First published
19 Jun 2013

Nanoscale, 2013,5, 7445-7451
Article type
Paper

Strain and tilt during epitaxial growth of highly ordered In2O3 nanorods

A. Regoutz, R. G. Egdell, D. Wermeille, R. A. Cowley and K. H. L. Zhang, Nanoscale, 2013, 5, 7445
DOI: 10.1039/C3NR00728F

Social activity

Search articles by author

Spotlight

Advertisements