Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD
Abstract
We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg
* Corresponding authors
a
Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju, South Korea
E-mail:
crlee7@jbnu.ac.kr
Fax: +82-63-270-2305
Tel: +82-63-270-2304
b Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail-10074, Saudi Arabia
We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg
J. Park, M. Kim, S. Kissinger and C. Lee, Nanoscale, 2013, 5, 2959 DOI: 10.1039/C3NR34245J
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content