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Issue 23, 2013
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Current transport mechanism at metal–semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars

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Abstract

The present work focuses on a qualitative analysis of localised IV characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in IV for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal–semiconductor (M–S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M–S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.

Graphical abstract: Current transport mechanism at metal–semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars

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Supplementary files

Article information


Submitted
23 Jul 2013
Accepted
20 Aug 2013
First published
27 Aug 2013

Nanoscale, 2013,5, 11699-11709
Article type
Paper

Current transport mechanism at metal–semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars

S. Nandy, G. Gonçalves, J. V. Pinto, T. Busani, V. Figueiredo, L. Pereira, R. F. Paiva Martins and E. Fortunato, Nanoscale, 2013, 5, 11699
DOI: 10.1039/C3NR03803C

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