In situ doping control and electrical transport investigation of single and arrayed CdS nanopillars†
Abstract
Highly aligned intrinsic and indium doped CdS nanopillar arrays were fabricated via a template assisted Solid Source
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* Corresponding authors
a
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China SAR
E-mail:
eezfan@ust.hk
b Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
c Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, R. O. C
d Department of Applied Chemistry, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyonggi-do, 446-701 Republic of Korea
Highly aligned intrinsic and indium doped CdS nanopillar arrays were fabricated via a template assisted Solid Source
L. Gu, X. Liu, K. Kwon, C. La, M. H. Lee, K. Yu, Y. Chueh and Z. Fan, Nanoscale, 2013, 5, 7213 DOI: 10.1039/C3NR01975F
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