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Issue 7, 2013
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Ultrathin amorphous zinc-tin-oxidebuffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

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Abstract

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.

Graphical abstract: Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

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Supplementary files

Article information


Submitted
22 Dec 2012
Accepted
10 Apr 2013
First published
15 Apr 2013

This article is Open Access

Energy Environ. Sci., 2013,6, 2112-2118
Article type
Communication

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Y. S. Lee, J. Heo, S. C. Siah, J. P. Mailoa, R. E. Brandt, S. B. Kim, R. G. Gordon and T. Buonassisi, Energy Environ. Sci., 2013, 6, 2112
DOI: 10.1039/C3EE24461J

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