Observation of SiC nanodots and nanowires in situ growth in SiOC ceramics

Abstract

SiC nanodots and nanowires have been prepared by annealing silicon oxycarbide (SiOC) ceramics that had been synthesized in an Ar environment. The microstructure derivation and morphology variation of the SiC nanowires annealed at different temperatures were investigated. The experiment results showed that SiC nanodots were precipitated from the amorphous SiOC ceramics due to the phase separation process of SiOC, and the content of the SiC nanodots increased with the annealing temperature. However, the SiC nanowires formation was mainly attributed to the vapor phases and vapor–solid reaction for nucleation and growth. This process supplied a feasible way to synthesize reinforcing SiC nanowires in situ within the SiOC matrices.