Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition
Abstract
Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by
* Corresponding authors
a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
b
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
E-mail:
msgli@scut.edu.cn
Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by
H. Yang, W. Wang, Z. Liu and G. Li, CrystEngComm, 2013, 15, 7171 DOI: 10.1039/C3CE40886H
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