Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4†
Abstract
A new layered chalcogenide semiconductor, Bi2MnTe4, was discovered. It was prepared by melting and
* Corresponding authors
a
Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Geumcheon-gu, Seoul 153-801, Republic of Korea
E-mail:
yslim@kicet.re.kr
b Department of Materials Science and Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-gu, Seoul 129-749, Republic of Korea
c
LG Chem/Research Park, 104-1 Moonji-dong, Yuseong-gu, Daejeon 305-380, Republic of Korea
E-mail:
pmoka@lgchem.com
A new layered chalcogenide semiconductor, Bi2MnTe4, was discovered. It was prepared by melting and
D. S. Lee, T. Kim, C. Park, C. Chung, Y. S. Lim, W. Seo and H. Park, CrystEngComm, 2013, 15, 5532 DOI: 10.1039/C3CE40643A
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