Characterization of Bridgman grown GaSe:Al crystals

Abstract

Centimeter-sized Al-doped nonlinear GaSe crystals were grown by the modified Bridgman method with heat field rotation. The alumina distribution coefficient in the grown crystals was estimated to be about 8 × 10⁻² for GaSe:Al (≥0.1 at%) crystals. GaSe:Al (≤0.5 at%) crystals possess optical properties suitable for non-linear applications. For the first time the increase in the ordinary refractive index of GaSe crystals with doping was demonstrated to be different to other doped GaSe crystals.